Molecular segregation observed in a concentrated alcohol–water solution
When a simple alcohol such as methanol or ethanol is mixed with water,, the entropy of the
system increases far less than expected for an ideal solution of randomly mixed molecules …
system increases far less than expected for an ideal solution of randomly mixed molecules …
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
As silicon-based transistors in integrated circuits grow smaller, the concentration of charge
carriers generated by the introduction of impurity dopant atoms must steadily increase …
carriers generated by the introduction of impurity dopant atoms must steadily increase …
Advances in ultrashallow doping of silicon
C Zhang, S Chang, Y Dan - Advances in Physics: X, 2021 - Taylor & Francis
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …
and revolutionary quantum devices in quantum computing. In this review, we give a brief …
Superconductivity in Doped Semiconductors: The Case of the Clathrates
We present a joint experimental and theoretical study of the superconductivity in doped
silicon clathrates. The critical temperature in B a 8@ S i-46 is shown to strongly decrease …
silicon clathrates. The critical temperature in B a 8@ S i-46 is shown to strongly decrease …
Realization of atomically controlled dopant devices in silicon
To date, the only tools that have allowed the manipulation of matter at the atomic level are
scanning probe microscopes.[1] However, atomic manipulation in semiconductors is not …
scanning probe microscopes.[1] However, atomic manipulation in semiconductors is not …
Effects of phosphorus doping and postgrowth laser annealing on the structural, electrical, and chemical properties of phosphorus-doped silicon films
M Lee, HY Ryu, E Ko, DH Ko - ACS Applied Electronic Materials, 2019 - ACS Publications
Phosphorus has low solubility in silicon, but nonequilibrium incorporation of phosphorus
exhibits unusual high strain and low contact resistance for advanced Si-based metal-oxide …
exhibits unusual high strain and low contact resistance for advanced Si-based metal-oxide …
Ultradense phosphorous delta layers grown into silicon from molecular precursors
Phosphorous δ-doping layers were fabricated in silicon by PH 3 deposition at room
temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope …
temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope …
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
We develop a super-saturation technique to extend the previously established doping
density limit for ultra-high vacuum monolayer doping of silicon with phosphorus. Through an …
density limit for ultra-high vacuum monolayer doping of silicon with phosphorus. Through an …
Atomic control of the electronic structure at complex oxide heterointerfaces
HY Hwang - MRS bulletin, 2006 - Springer
The following article is based on the Outstanding Young Investigator Award presentation
given by Harold Y. Hwang of the University of Tokyo on March 29, 2005, at the Materials …
given by Harold Y. Hwang of the University of Tokyo on March 29, 2005, at the Materials …
Setup for optimized grazing incidence x-ray absorption experiments on thin films on substrates
We present a state-of-the-art experimental apparatus and a proper setup to perform x-ray
absorption spectroscopy (XAS) experiments in grazing incidence mode. This geometry is …
absorption spectroscopy (XAS) experiments in grazing incidence mode. This geometry is …