β-Ga 2 O 3 is an ultra-wide bandgap semiconductor with applications in power electronic
devices. Revealing the transport characteristics of β-Ga 2 O 3 devices at various …

Interfaces play a central role in determining properties of optical and electronic devices.
Many mature techniques exist for surface characterization, providing a great deal of detailed …

Deepening the understanding of interface-type resistive switching (RS) in metal/oxide
heterojunctions is a key step for the development of high-performance memristors and …

Monoclinic beta‐phase gallium oxide (β‐Ga2O3) is an ultrawide‐bandgap semiconductor,
intensively studied as a viable candidate for next‐generation power electronics …

We probe electron transport across the Au/organic interface based on oriented thin films of
the high-performance n-type perylene diimide semiconductor PDI8-CN 2. To this purpose …

The reversible resistive switching effect at oxide interface shows promising applications in
information storage and artificial intelligence. However, the microscopic switching …

In this study, polycrystalline thin films of PDI8-CN2 deposited on hydrogen-terminated silicon
(H-Si) were thoroughly examined using atomic force microscopy (AFM). The research …

Current-voltage characteristics of Nb doped SrTiO 3 single crystals are detected at room
temperatures. Results reveal that modifications of electrode configurations play a significant …

We develop a phase-space ab-initio formalism to compute Ballistic Electron Emission
Spectroscopy current–voltage I (V)'s in a metal–semiconductor interface. We consider …

The formation of conducting paths consisting of oxygen vacancies plays a crucial role in the
resistive switching (RS) phenomenon in oxides. However, it is extremely challenging to …