Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
L Stockmeier, C Kranert, P Fischer, B Epelbaum… - Journal of Crystal …, 2019 - Elsevier
A contactless, non-destructive approach to measure the geometrical parameters of the
growth ridge, based on surface topography, is presented and established. It allows a …
growth ridge, based on surface topography, is presented and established. It allows a …
3D modeling of growth ridge and edge facet formation in< 100> floating zone silicon crystal growth process
A Krauze, J Virbulis, S Zitzelsberger, G Ratnieks - Journal of Crystal Growth, 2019 - Elsevier
A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for
silicon is presented. Heat transfer equations for the melt and crystal are solved, and an …
silicon is presented. Heat transfer equations for the melt and crystal are solved, and an …
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
I Drikis, M Plate, J Sennikovs, J Virbulis - Journal of Crystal Growth, 2017 - Elsevier
Simulations of 3D anisotropic stress are carried out in< 100> and< 111> oriented Si crystals
grown by FZ and CZ processes for different diameters, growth rates and process stages …
grown by FZ and CZ processes for different diameters, growth rates and process stages …
Three-dimensional modelling of thermal stress in floating zone silicon crystal growth
M Plate, A Krauze, J Virbulis - IOP Conference Series: Materials …, 2018 - iopscience.iop.org
During the growth of large diameter silicon single crystals with the industrial floating zone
method, undesirable level of thermal stress in the crystal is easily reached due to the …
method, undesirable level of thermal stress in the crystal is easily reached due to the …
Morphology and structural and electrical parameters of float-zone Si (111) single crystals
KB Fritzler, EM Trukhanov, VV Kalinin - Technical Physics Letters, 2015 - Springer
The surface structure of silicon single crystals grown in the [111] direction using the floating
zone technique and the distribution of electric parameters of these crystals over the crystal …
zone technique and the distribution of electric parameters of these crystals over the crystal …
Polikristāla kušanas un termomehānisko spriegumu trīsdimensionāla matemātiskā modelēšana peldošās zonas silīcija kristālu audzēšanas procesā: Promocijas …
M Plāte - 2021 - dspace.lu.lv
Silīcija monokristālu audzēšanas procesā ar peldošās zonas metodi indukcijas spoles forma
un materiālo īpašību anizotropija nosaka būtiskākās fizikālo lauku novirzes no aksiālās …
un materiālo īpašību anizotropija nosaka būtiskākās fizikālo lauku novirzes no aksiālās …
Single crystal of silicon with< 100> orientation, which is doped with n-type dopant, and method for producing such a single crystal
G Raming, L Stockmeier, J Friedrich, M Daniel… - US Patent …, 2022 - Google Patents
Single crystal silicon with< 100> orientation is doped with n-type dopant and comprises a
starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20 …
starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20 …
Морфология, структурные и электрофизические свойства монокристаллов бестигельного Si (111)
КБ Фрицлер, ЕМ Труханов, ВВ Калинин - Письма в Журнал …, 2015 - elibrary.ru
Представлены результаты исследования структурного состояния поверхности и
распределения электрофизических параметров по длине монокристаллов кремния …
распределения электрофизических параметров по длине монокристаллов кремния …