Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film
transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano …

In this study, we have effectively fabricated undoped and Sn-doped zinc oxide thin film
transistors (ZTO TFTs) with the back-gate structure on commercially purchased p-type Si …

In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited
at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as …

Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF
excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at …

Amorphous indium gallium zinc oxide (a-IGZO) semiconductor thin films and transistors
were deposited on alkali-free glasses by the sol–gel route. The atomic ratio of In: Ga: Zn in …

Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates
electron traps in the compounds, degrading the electron mobility, μ. To assess whether the …

We fabricated InGaZnO (IGZO) thin film transistors by the sol–gel method and evaluated the
effects of the Ga content and sintering time on their electrical properties. The IGZO precursor …

Field-effect transistors (FETs) based on solution-processed indium-gallium-zinc oxide
(IGZO) exhibited excellent electrical properties, including a high carrier mobility over 1 cm …

Short period superlattices comprising alternating InO2− and GaO+ (ZnO) 2 layers were
fabricated by a simple hybrid solution process and reactive solid-phase epitaxy at high …