The progress made toward the definition of a modular compact modeling technology for
graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary …

Graphene has been targeted for a wide variety of applications due to its characteristics. It is
a zero-bandgap material, has high conductivity, and high carrier mobility, which makes it a …

The high-frequency performance of top-gated graphene field-effect transistors (GFETs)
depends to a large extent on the saturation velocity of the charge carriers, a velocity limited …

Graphene devices for analog and radio frequency (RF) applications are prone to low
frequency noise (LFN) due to its up conversion to undesired phase noise at higher …

Straightforward contact resistance extraction methods based on electrical device
characteristics are described and applied here to graphene field-effect transistors from …

Transistors operating at high frequencies are the basic building blocks of millimeter-wave
communication and sensor systems. The high charge-carrier mobility and saturation velocity …

Transistors operating at high frequencies are the basic building blocks of millimeter wave
communication and sensor systems. The high velocity and mobility of carriers in graphene …

Предложен метод расчета квантовой емкости в модели полевых транзисторов на
двухслойном графене. С помощью разработанной модели проведены расчеты …

The progress made toward the definition of a modular compact modeling technology for
graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary …