Processing, structure, properties, and applications of PZT thin films

N Izyumskaya, YI Alivov, SJ Cho, H Morkoç… - Critical reviews in …, 2007 - Taylor & Francis
There has been a resurgence of complex oxides of late owing to their ferroelectric and
ferromagnetic properties. Although these properties had been recognized decades ago, the …

Interface-induced phenomena in polarization response of ferroelectric thin films

AK Tagantsev, G Gerra - Journal of applied physics, 2006 - pubs.aip.org
This article reviews the existing theoretical models describing the interface-induced
phenomena which affect the switching characteristics and dielectric properties of …

Improved chemical and electrochemical stability of perovskite oxides with less reducible cations at the surface

N Tsvetkov, Q Lu, L Sun, EJ Crumlin, B Yildiz - Nature materials, 2016 - nature.com
Segregation and phase separation of aliovalent dopants on perovskite oxide (ABO3)
surfaces are detrimental to the performance of energy conversion systems such as solid …

[图书][B] Domains in ferroic crystals and thin films

AK Tagantsev, LE Cross, J Fousek - 2010 - Springer
With much excitement and great enthusiasm I introduce this thorough treatise on the major
aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major …

Oxides, oxides, and more oxides: high-κ oxides, ferroelectrics, ferromagnetics, and multiferroics

N Izyumskaya, Y Alivov, H Morkoç - Critical Reviews in Solid State …, 2009 - Taylor & Francis
We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

MH Park, HJ Kim, YJ Kim, W Jeon… - physica status solidi …, 2014 - Wiley Online Library
The effect of the top electrode (TE) on the ferroelectric properties and switching endurance
of thin Hf0. 5Zr0. 5O2 films was examined. The TiN/Hf0. 5Zr0. 5O2/TiN capacitor can endure …

Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin films

MS Chen, TB Wu, JM Wu - Applied Physics Letters, 1996 - pubs.aip.org
By changing the electrode combination of Pt and LaNiO3 (LNO), four capacitor types of
Pt/PZT/Pt/Si, Pt/LNO/PZT/Pt/Si, Pt/LNO/PZT/LNO/Pt/Si, and Pt/PZT/LNO/Pt/Si, were prepared …

Defect‐dipole alignment and tetragonal strain in ferroelectrics

WL Warren, GE Pike, K Vanheusden, D Dimos… - Journal of applied …, 1996 - pubs.aip.org
We show the alignment of defect dipoles along the direction of the spontaneous polarization
in polycrystalline Pb (Zr, Ti) O3 and BaTiO3 ferroelectric ceramics using electron …

Polarization imprint and size effects in mesoscopic ferroelectric structures

M Alexe, C Harnagea, D Hesse, U Gösele - Applied Physics Letters, 2001 - pubs.aip.org
Piezoresponse scanning force microscopy measurements performed on lead zirconate
titanate mesoscopic structures revealed a negative shift of the initial piezoelectric hysteresis …

Recent progress in bismuth ferrite-based thin films as a promising photovoltaic material

MM Seyfouri, D Wang - Critical Reviews in Solid State and …, 2021 - Taylor & Francis
Application of ferroelectric oxides in photovoltaic devices has been revived by the
emergence of bismuth ferrite thin films, a lead-free perovskite with a narrow bandgap (∼ 2.7 …