Zirconium oxide thin films were deposited by sputtering a ZrO2 target under an argon-
oxygen gas mixture and different total gas pressures. Their composition, structure and …

ZrO 2 thin films were deposited at various oxygen partial pressures (2.0× 10− 5–3.5× 10− 1
mbar) at 973 K on (1 0 0) silicon and quartz substrates by pulsed laser deposition. The …

This work presents the influence of dominated electronic energy loss over nuclear energy
loss induced by swift heavy ion (SHI) irradiation on the physico-chemical, optical and other …

The zirconium oxide (ZrO 2) thin films are deposited on Si (100) and quartz substrates at
various substrate temperatures (room temperature–973áK) at an optimized oxygen partial …

Superhydrophobic surfaces were prepared via immersing the clean perpendicular zinc
substrates into aqueous copper chloride (CuCl2) solution and followed by annealing in dry …

In this work, we explore the electrical properties of a metal–oxide–semiconductor system
that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm …

High-k ZrO 2 thin films are grown on p-type silicon by metal–organic chemical vapor
deposition based on zirconiumtetrakistrifluoroacetylacetonate as single-source precursor …

Zr-oxide film was deposited by remote plasma-enhanced atomic layer deposition (PEALD)
and showed relatively low impurity contamination. In the Zr-oxide film deposition process …

Single layer aluminium oxide (Al 2 O 3), zirconium oxide (ZrO 2) and Al 2 O 3/ZrO 2 nano
multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser …

Mixed metal oxide (MMO) films containing Ni2+ and Al3+ have been fabricated by a simple
process involving calcination of layered double hydroxide (LDH) film precursors at 300 …