Abstract Impact of combinational (In 0.21 Al 0.21 Ga 0.58 As/In 0.15 Ga 0.85 As and In 0.15
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …

Here, we propose a different approach for growing strain-coupled In 0.5 Ga 0.5 As quantum
dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …

We are introducing here hybrid Stranski Krastanov (SK) on submonolayer (SML) quantum
dot (QD) heterostructure for improved photovoltaic energy conversion in the near infrared …

This study describes the effect of a thin GaAs spacer of 4.5 nm thickness in a bilayer-coupled
InAs quantum dot (QD) heterostructure. Here, we report the first demonstration of InAs/GaAs …

In this study, a theoretical model is developed for investigating the effect of thermal
annealing on a single-layer quaternary-capped (In 0.21 Al 0.21 Ga 0.58 As) InAs quantum …

In this study, the optical properties of InAs quantum dots (QDs) with various strain-reducing
layers (SRLs) of GaAsSb and InGaAsSb are characterized using photoluminescence (PL) …

A facile approach for surface passivation of water-soluble CdSe quantum dots (CdSe QDs)
by new water-soluble multidentate biopolymer based on poly ((2-dimethylaminoethyl) …

Photoabsorption throughout the entire solar spectrum and successive efficient photovoltaic
energy conversion are always being the primary goal in the domain of solar energy …

Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal
annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots …

Strain coupled quantum dots are the high priority research topic of the present day scientific
community. The ability to enhance the photoluminescence properties is very important for …