We study the electronic and optical properties of a heterostructure based on Manning-like
double quantum wells under the impact of an n-doped layer inserted in two different …

In the present paper, the linear and nonlinear optical absorption coefficients and refractive
index changes between the ground and the first excited states in double GaN/Al x Ga (1− x) …

In this paper, we compute the impurity binding energy, electronic states, and optical
absorption coefficients of a staircase-like spherical quantum dot with on-center hydrogenic …

In the present work, the intersubband transition and the optical absorption coefficient
between the ground and the first excited states in the Si-δ-doped step AlGaN/GaN quantum …

In this study, the effects of magnesium composition and the external electric field on the
optical absorption coefficient lineshape and intersubband transitions in Mg x Zn (1-x) O/ZnO …

This work theoretically investigates the impact of structural parameters on energy levels and
optical absorption coefficients in an Si-delta doped GaAs field-effect transistor δ-FE T. The …

In this work, we investigated the effects of polarizations and structural parameters on the
optical absorption coefficient (OAC) and the intersubband transition between the three …

In this work, we have performed a numerical calculation to obtain the lowest three electron
subband energy levels and their density of probabilities in a n-doped heterostructure …

In this paper, we investigated the effect of the central AlGaAs barrier width L b2 in a resonant
tunneling diode (RTD) composed by triple barriers on the current-voltage characteristics …

In the framework of effective mass approximation, we theoretically investigate the electronic
structure of the Si δ-doped InAlN/GaN single quantum well by solving numerically the …