Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
K Alberi, J Wu, R Kudrawiec, Y Nanishi - Journal of Applied Physics, 2024 - pubs.aip.org
The Special Topic “Native Defects, Impurities and the Electronic Structure of Compound
Semiconductors” is dedicated to Dr. Wladyslaw (Wladek) Walukiewicz, our esteemed …
Semiconductors” is dedicated to Dr. Wladyslaw (Wladek) Walukiewicz, our esteemed …
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
RA Peña, B Orfao, I Íñiguez-de-la-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The hysteresis cycles observed in the reverse leakage current measured at low
temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied …
temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied …
Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes
H Kim - Physica Scripta, 2024 - iopscience.iop.org
Based on the capacitance/conductance–voltage (C/G–V) and current–voltage (I–V)
methods, the interface characteristics and the current conduction mechanisms of Pt/n-InP …
methods, the interface characteristics and the current conduction mechanisms of Pt/n-InP …