Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics
The commercial success of radio-frequency acoustic filters in wireless communication
systems has launched aluminum nitride (AlN) as one of the most widely used …
systems has launched aluminum nitride (AlN) as one of the most widely used …
Research progress of AlGaN-based deep ultraviolet light-emitting diodes
R Xu, Q Kang, Y Zhang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
Combination of sputter deposition and high-temperature annealing is a promising technique
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
AlN on sapphire with dislocation density of 10 7 cm− 2 was prepared by double sputtering
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Thermal cycle annealing (TCA) is introduced to accelerate the dislocation annihilation in
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …
Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
III-nitride semiconductors have crystallographic polarity; therefore, controlling the polarity of
these materials can realize novel device structures. However, this has been difficult to …
these materials can realize novel device structures. However, this has been difficult to …
Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
A review of ultrawide bandgap materials: properties, synthesis and devices
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
Recent progress on AlGaN based deep ultraviolet light-emitting diodes below 250 nm
C Zhang, K Jiang, X Sun, D Li - Crystals, 2022 - mdpi.com
AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a
wavelength below 250 nm, have great application potential in the fields of sterilization and …
wavelength below 250 nm, have great application potential in the fields of sterilization and …
Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice
B Tang, Z Wan, H Hu, L Gong, S Zhou - Applied Physics Letters, 2021 - pubs.aip.org
We report the metal-organic chemical vapor deposition growth of high-quality AlN on
sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the …
sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the …