The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

The ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of
amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed. In particular, the …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

General trends in integrated circuit technology toward smaller device dimensions, lower
thermal budgets, and simplified processing steps present severe physical and engineering …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

The paper presents the damage accumulation in silicon carbide (SiC) as a function of the
ion mass, the ion energy and the implantation temperature. A defect-interaction and …

Using a combination of Z-contrast scanning transmission electron microscopy, scanning
tunneling microscopy, and plan view diffraction contrast imaging, we have studied the …

Observations of GeV heavy ion and MeV cluster-ion tracks in crystalline solids give us new
insight into registration physics. Thermal and ion explosion spikes no longer compete; a …

Silicon (100) crystals are implanted with 1-MeV Si 2+ ions to a fixed fluence of 1× 10 15
ions/cm 2 at systematically different incident-ion dose rates, R, and substrate temperatures …

We have investigated the atomistic mechanism behind the irradiation-induced
amorphization in Si using molecular dynamics simulation techniques. The microscopic …