Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
Structural coloration techniques have improved display science due to their high durability in
terms of resistance to bleaching and abrasion, and low energy consumption. Here, we …
terms of resistance to bleaching and abrasion, and low energy consumption. Here, we …
Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80%
The dependence of the activation energy as well as the energetic levels of the neutral
charge state and the DX center of the Si donor in Al x Ga 1− x N: Si samples on aluminum …
charge state and the DX center of the Si donor in Al x Ga 1− x N: Si samples on aluminum …
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
The development of ultraviolet AlGaN multiple quantum well (MQW) light emitting diodes
(LEDs) in the wavelength range between 239 and 217 nm is presented. The effects of …
(LEDs) in the wavelength range between 239 and 217 nm is presented. The effects of …
Deep UV emission from highly ordered AlGaN/AlN core–shell nanorods
Three-dimensional core–shell nanostructures could resolve key problems existing in
conventional planar deep UV light-emitting diode (LED) technology due to their high …
conventional planar deep UV light-emitting diode (LED) technology due to their high …
Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
In this work, the growth and conductivity of semipolar Al x Ga 1− x N: Si with (11-22)
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …
orientation are investigated. Al x Ga 1− x N: Si (x= 0.60±0.03 and x= 0.80±0.02) layers were …
Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
We report positron annihilation results on vacancy defects in Si-doped Al0. 90Ga0. 10N
alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and …
alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and …
Tin gallium oxide epilayers on different substrates: optical and compositional analysis
DA Hunter, G Naresh‐Kumar, PR Edwards… - … status solidi (b), 2024 - Wiley Online Library
Electron beam techniques have been used to analyze the impact of substrate choice and
growth parameters on the compositional and optical properties of tin gallium oxide …
growth parameters on the compositional and optical properties of tin gallium oxide …
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
C Kuhn, M Martens, F Mehnke, J Enslin… - Journal of Physics D …, 2018 - iopscience.iop.org
The waveguide strain and the surface morphologies of AlGaN-based laser heterostructures
emitting in the deep UV spectral range have been investigated. In particular, the impact of …
emitting in the deep UV spectral range have been investigated. In particular, the impact of …
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
With a view to supporting the development of ultra-violet light-emitting diodes and related
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films
C Trager-Cowan, A Alasmari, W Avis… - Photonics …, 2019 - opg.optica.org
In this paper we describe the scanning electron microscopy techniques of electron
backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray …
backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray …