In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …

During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy.
Growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x …

Ga-rich InGaN is one of the key materials for short wavelength light emitting devices and has
been extensively studied in the past 10 yr. 1 Much less is known about the In-rich side of this …

Renewable and green energy sources would be viable candidates to meet world's energy
demands.[1, 2] At present, solar cells,[3–5] thermoelectric modules,[6, 7] and hydrogen fuel …

The concept of the hot carrier cell is to absorb a wide range of photon energies and, before
the resultant “hot” carriers can thermalise with the lattice, separate and collect them in the …

We report the electrical and optical properties of undoped and Mg-doped InN grown by
molecular beam epitaxy on sapphire (0001) substrates. InN has a hexagonal structure and …

We present an eight-band k∙ p-model for the calculation of the electronic structure of wurtzite
semiconductor quantum dots (QDs) and its application to indium gallium nitride (In x Ga 1− x …