We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio
frequency surface acoustic wave. We find that the time of laser excitation during the acoustic …

We study single electron tunneling from the barrier in the binary InAs/GaAs quantum
structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the …

Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …

Excitonic dynamics in a hybrid dot-well system composed of InAs quantum dots (QDs) and
an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection …

Time-resolved optical spin orientation spectroscopy was employed to investigate the
temperature-dependent electron spin injection in In 0.1 Ga 0.9 As quantum well (QW) and In …

The interplay between structural properties and charge transfer in self-assembled quantum
ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot …

The molecular beam epitaxy grown structures are investigated, comprising of InGaAs
quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs) …

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well,
InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by …

The electron transfer dynamics between self-assembled quantum dots and their
environment are measured under nonequilibrium conditions by time-dependent capacitance …

A set of high quality single quantum well samples of GaAs 1− x Bi x with bismuth
concentrations not exceeding 6% and well widths ranging from 7.5 to 13 nm grown by …