A new small-signal modeling approach applied to GaN devices
A Jarndal, G Kompa - IEEE Transactions on Microwave Theory …, 2005 - ieeexplore.ieee.org
A new small-signal modeling approach applied to GaN-based devices is presented. In this
approach, a new method for extracting the parasitic elements of the GaN device is …
approach, a new method for extracting the parasitic elements of the GaN device is …
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz
S Bouzid-Driad, H Maher, N Defrance… - IEEE Electron …, 2012 - ieeexplore.ieee.org
This letter reports on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high-
resistive silicon substrate with a record maximum oscillation cutoff frequency F MAX. Double …
resistive silicon substrate with a record maximum oscillation cutoff frequency F MAX. Double …
A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
In this paper, a new 20-element small-signal equivalent circuit for GaN HEMTs is proposed
and correspondingly, a direct extraction method is developed. Compared with the 16 …
and correspondingly, a direct extraction method is developed. Compared with the 16 …
An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
A Jarndal, G Kompa - IEEE microwave and wireless …, 2006 - ieeexplore.ieee.org
The validity of the proposed small-signal model (SSM) and the developed extraction method
in for large GaN devices is investigated. Extraction of parasitic elements is performed for …
in for large GaN devices is investigated. Extraction of parasitic elements is performed for …
Scalable equivalent circuit FET model for MMIC design identified through FW-EM analyses
D Resca, A Raffo, A Santarelli… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
A scalable approach to the modeling of millimeter-wave field-effect transistors is presented
in this paper. This is based on the definition of a lumped extrinsic parasitic network, easily …
in this paper. This is based on the definition of a lumped extrinsic parasitic network, easily …
Scalable nonlinear FET model based on a distributed parasitic network description
D Resca, A Santarelli, A Raffo… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
Electron device modeling requires accurate descriptions of parasitic passive structures
connecting the intrinsic electron device to the external world. In conventional approaches …
connecting the intrinsic electron device to the external world. In conventional approaches …
A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate …
In this paper, extrinsic and intrinsic parameters were extracted from the experimental S-
parameters using 16-and 22-element small signal equivalent circuit model for large gate …
parameters using 16-and 22-element small signal equivalent circuit model for large gate …
Advances in linear modeling of microwave transistors
A Zarate-de Landa, JE Zuniga-Juarez… - IEEE Microwave …, 2009 - ieeexplore.ieee.org
Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and
metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are …
metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are …
Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers
Envelope tracking (ET) is a promising power amplifier (PA) architecture for current and future
communications systems, which uses dynamic modulation of the supply voltage to provide …
communications systems, which uses dynamic modulation of the supply voltage to provide …
30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility
transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a …
transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a …