This paper proposes microarchitecture-level models for Within Die (WID) process and
system parameter variability that can be included in the design of high-performance …

Gate leakage current is expected to be the dominant leakage component in future
technology generations. In this paper, we propose methods for steady-state gate leakage …

In this tutorial, we give an introduction to the increasingly important effect of leakage in
recent and upcoming technologies. The sources of leakage such as subthreshold leakage …

In this survey we describe the main research directions in pre-silicon power modeling and
post-silicon power characterization. We review techniques in power modeling and …

Enabled by the continuous advancement in fabrication technology, present-day
synchronous microprocessors include more than 100 million transistors and have clock …

Converting a conventional contract into an electronic equivalent that can be executed and
enforced by computers is a challenging task. The difficulties are caused by the ambiguities …

In this article, we present a method to analyze the total leakage current of a circuit under
process variations, considering interdie and intradie variations as well as the effect of the …

The authors present microarchitecture-level statistical models for characterizing process and
system parameter variability, concentrating on gate length and on-chip temperature …

This application claims priority of US Provisional Patent Application No. 60/868,334 filed on
Dec. 2, 2006, entitled “A statistical library characterization method for the creation of …

Leakage currents are one major concern when designing recent CMOS devices, making
design for leakage at all stages of the design process mandatory. Early leakage optimization …