Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment
This paper has conducted a thorough investigation of InAlN HEMT using Silvaco TCAD
Single Event Upset (SEU) module, which captures the degradation brought on by the heavy …
Single Event Upset (SEU) module, which captures the degradation brought on by the heavy …
Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density
In this study, we utilize Nextnano device simulation software to systematically investigate the
dependence of 2-DEG (two-dimensional electron gas) density on the barrier and spacer …
dependence of 2-DEG (two-dimensional electron gas) density on the barrier and spacer …
Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes
III-nitride ultraviolet light-emitting diodes (UV LEDs) face low carrier confinement and poor p-
doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs …
doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs …
[PDF][PDF] An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects
A Bellakhdar, A Telia, JL Coutaz - International Journal of Electrical …, 2020 - academia.edu
We present an analytical model for the IV characteristics of AlGaN/GaN and AlInN/GaN high
electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping …
electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping …