As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
This review provides an overview of area-selective thin film deposition (ASD) with a primary focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …
Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can potentially alleviate the energy constraints and complexity/footprint challenges imposed by …
In this work, we demonstrate high-performance indium–tin-oxide (ITO) transistors with a channel thickness down to 1 nm and ferroelectric Hf0. 5Zr0. 5O2 as gate dielectric. An on …
As existing silicon-based memory technologies are reaching their fundamental limit, emerging memory alternatives, such as resistive random-access memories (RRAMs) …
S Yu, W Shim, X Peng, Y Luo - IEEE Transactions on Circuits …, 2021 - ieeexplore.ieee.org
To efficiently deploy machine learning applications to the edge, compute-in-memory (CIM) based hardware accelerator is a promising solution with improved throughput and energy …
H Kang, D Lee, Y Yang, D Kyo Oh, J Seong… - Photonics …, 2023 - spiedigitallibrary.org
Advancements in micro/nanofabrication have enabled the realization of practical micro/nanoscale photonic devices such as absorbers, solar cells, metalenses, and …
Silicon channel ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric and silicon channel suffers from high write voltage, limited write …
Two-dimensional transition metal dichalcogenides, such as MoS2, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient …