Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook

J Kim, X Ju, KW Ang, D Chi - ACS nano, 2023 - ACS Publications
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their
immense potential for scientific breakthroughs and technological innovations. While some …

Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Area-selective deposition: fundamentals, applications, and future outlook

GN Parsons, RD Clark - Chemistry of Materials, 2020 - ACS Publications
This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing

D Wang, P Wang, S Mondal, M Hu, Y Wu… - Advanced …, 2023 - Wiley Online Library
Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating

M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal… - ACS …, 2020 - ACS Publications
In this work, we demonstrate high-performance indium–tin-oxide (ITO) transistors with a
channel thickness down to 1 nm and ferroelectric Hf0. 5Zr0. 5O2 as gate dielectric. An on …

Memory applications from 2D materials

CC Chiang, V Ostwal, P Wu, CS Pang… - Applied Physics …, 2021 - pubs.aip.org
As existing silicon-based memory technologies are reaching their fundamental limit,
emerging memory alternatives, such as resistive random-access memories (RRAMs) …

RRAM for compute-in-memory: From inference to training

S Yu, W Shim, X Peng, Y Luo - IEEE Transactions on Circuits …, 2021 - ieeexplore.ieee.org
To efficiently deploy machine learning applications to the edge, compute-in-memory (CIM)
based hardware accelerator is a promising solution with improved throughput and energy …

Emerging low-cost, large-scale photonic platforms with soft lithography and self-assembly

H Kang, D Lee, Y Yang, D Kyo Oh, J Seong… - Photonics …, 2023 - spiedigitallibrary.org
Advancements in micro/nanofabrication have enabled the realization of practical
micro/nanoscale photonic devices such as absorbers, solar cells, metalenses, and …

Logic compatible high-performance ferroelectric transistor memory

S Dutta, H Ye, AA Khandker, SG Kirtania… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Silicon channel ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL)
between ferroelectric and silicon channel suffers from high write voltage, limited write …

Atomic layer deposition of large-area polycrystalline transition metal dichalcogenides from 100° C through control of plasma chemistry

M Mattinen, F Gity, E Coleman, JFA Vonk… - Chemistry of …, 2022 - ACS Publications
Two-dimensional transition metal dichalcogenides, such as MoS2, are intensely studied for
applications in electronics. However, the difficulty of depositing large-area films of sufficient …