Metal–insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

AA Shashkin, SV Kravchenko - Annals of Physics, 2021 - Elsevier
We review recent experimental results on the metal–insulator transition and low-density
phases in strongly-interacting, low-disordered silicon-based two-dimensional electron …

How to recognize the universal aspects of Mott criticality?

Y Tan, V Dobrosavljević, L Rademaker - Crystals, 2022 - mdpi.com
In this paper we critically discuss several examples of two-dimensional electronic systems
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …

Quantum scaling for the metal–insulator transition in a two-dimensional electron system

V Kagalovsky, SV Kravchenko, D Nemirovsky - Scientific Reports, 2024 - nature.com
The quantum phase transition observed experimentally in two-dimensional (2D) electron
systems has been a subject of theoretical and experimental studies for almost 30 years. We …

Metal-insulator transition in the disordered Hubbard model of the Lieb lattice

Y Li, L Tian, T Ma, HQ Lin - Physical Review B, 2022 - APS
Using the determinant quantum Monte Carlo method, we investigate the metal-insulator
transition in the interacting disordered Hubbard model of a Lieb lattice in which the system …

[HTML][HTML] Crossover between ballistic and diffusive regime in 2D SiGe quantum well

S Dlimi, L Limouny - Applied Surface Science Advances, 2021 - Elsevier
In this manuscript, we report a theoretical investigation of the magneto-conductivity (σ (B, T))
in the metallic side (where d σ/dt< 0) of a low densities 2D hole system in SiGe at very low …

Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures

MY Melnikov, AA Shashkin, SH Huang, CW Liu… - Applied Physics …, 2024 - pubs.aip.org
We have developed a technique that dramatically reduces the contact resistances and
depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility …

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

AA Shashkin, MY Melnikov, VT Dolgopolov… - Scientific Reports, 2022 - nature.com
The increase in the resistivity with decreasing temperature followed by a drop by more than
one order of magnitude is observed on the metallic side near the zero-magnetic-field metal …

[图书][B] Quantum Critical Regimes Around the Metal-Insulator Transition

Y Tan - 2023 - search.proquest.com
Metal-insulator transitions (MITs) remain one of the unresolved science problems of
condensed-matter physics, which are rather general and of fundamental importance. In the …

Low-temperature magneto-transport and X-ray metrology of ultra-thin group V doping layers in silicon: platforms for quantum science and technology

N D'Anna - 2022 - research-collection.ethz.ch
In 1947 the first field-effect-transistor was invented, since then the miniaturisation of
semiconductor electronics has enabled the sustained exponential growth in the density of …