Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

As the pitch size of Cu lines in the back-end-of-line (BEOL) is decreased below a few tens of
nanometers, resistivity exponentially increases and electromigration (EM) causes device …

Graphene-based interconnects are considered promising replacements for traditional
copper (Cu) interconnect due to their great electric properties. In this article, an interconnect …

SRAM performance is highly dominated by interconnects as technology scales down
because of the significant parasitic resistance and capacitance in the interconnect. This …

Promising interconnect materials continue to emerge and are considered as potential
replacements for Cu interconnects. In this paper, an intermediate-length interconnect …

The integration of novel materials has been pivotal in advancing Si-based devices ever
since Si became the preferred material for transistors, and later, integrated circuits. New …

Promising interconnect materials continue to emerge and are considered as potential
replacements for Cu interconnects. In this article, an interconnect technology/system …