Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on
the electrical and optical properties of GaN-based materials are reviewed. In addition, the …

In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN
light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and …

Group III nitride semiconductors have attracted great attention in recent years owing to the
successful commercialization of light emitting diodes from ultraviolet to visible range1–5 and …

GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …

In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

The present status of the silicon carbide and gallium nitride bipolar power semiconductor
devices is reviewed. Several unipolar and bipolar figures of merit have been examined to …

Synchrotron radiation-based x-ray photoemission spectroscopy was used to study the
surface Fermi level position within the band gap for thin metal overlayers of Au, Al, Ni, Ti, Pt …

We report on low-resistance ohmic contacts to the moderately doped n-type ZnO: Al (nd= 2×
10 17 cm− 3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au …

In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with
low 1017/cm3, grown by metalorganic chemical vapor deposition (MOCVD) on (0001) …