[HTML][HTML] Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies
Defects in two-dimensional boron nitride (BN) are candidates for a manifold of applications,
for example, as single-photon emitters or optically addressable spin defects. However, the …
for example, as single-photon emitters or optically addressable spin defects. However, the …
Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials
P Tatarczak, J Iwański, AK Dąbrowska… - …, 2024 - iopscience.iop.org
Strain built-in electronic and optoelectronic devices can influence their properties and
lifetime. This effect is particularly significant at the interface between two-dimensional …
lifetime. This effect is particularly significant at the interface between two-dimensional …
Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes
Although large efforts have been made to improve the growth of hexagonal boron nitride
(hBN) by heteroepitaxy, the non-native substrates remain a fundamental factor that limits the …
(hBN) by heteroepitaxy, the non-native substrates remain a fundamental factor that limits the …
Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration
K Ludwiczak, AK Da̧browska… - … Applied Materials & …, 2024 - ACS Publications
Van der Waals heterostructures open up vast possibilities for applications in optoelectronics,
especially since it was recognized that the optical properties of transition-metal …
especially since it was recognized that the optical properties of transition-metal …
Understanding vapor phase growth of hexagonal boron nitride
A Sutorius, R Weißing, CR Pèrez, T Fischer, F Hartl… - Nanoscale, 2024 - pubs.rsc.org
Hexagonal boron nitride (hBN), with its atomically flat structure, excellent chemical stability,
and large band gap energy (∼ 6 eV), serves as an exemplary 2D insulator in electronics …
and large band gap energy (∼ 6 eV), serves as an exemplary 2D insulator in electronics …
Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation
Y Duo, Q Yang, L Wang, Y Song, Z Huo… - Crystal Growth & …, 2024 - ACS Publications
Uniform and continuous wafer-level sp2-hybridized boron nitride (sp2-BN) is essential for
the development of other III-nitride semiconductors in alleviating lattice mismatch and …
the development of other III-nitride semiconductors in alleviating lattice mismatch and …
[HTML][HTML] Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
A common solution for precise magnetic field sensing is to employ spin-active defects in
semiconductors, with the NV center in diamond as a prominent example. However, the three …
semiconductors, with the NV center in diamond as a prominent example. However, the three …