We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting
diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin …

The continuous progress in thin film materials and devices has greatly promoted the
development in the field of flexible electronics. As one of the most common thin film devices …

We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) with anodic
AlOx gate dielectric on a polyethylene naphthalate (PEN) substrate with a process …

Electric-double-layer effect is observed in mesoporous SiO 2 films deposited by plasma-
enhanced chemical vapor deposition at room temperature. Room-temperature processed …

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO),
whether intrinsic to the amorphous structure or not, has serious implications for the …

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film
transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from …

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response
flexible display. Remarkably high performance TFT, made at room temperature on flexible …

This study examined the effect of oxygen (O 2) high pressure annealing (HPA) on tin-doped
indium oxide (ITO) thin film transistors (TFTs). The HPA-treated TFT at 150 C exhibited a …

We report the fabrication and characteristics of a ZnO thin-film transistor (TFT) using a 50 nm
thick ZnO film as an active layer on an Al 2 O 3 gate dielectric film deposited by atomic layer …

Flexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide
substrates. The effect of the alumina buffer layers on the device performance and stability is …