SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Abstract Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
We present a detailed study regarding the bandgap dependence on diameter and
composition of spherical Ge-rich Ge x Si1− x nanocrystals (NCs). For this, we conducted a …
composition of spherical Ge-rich Ge x Si1− x nanocrystals (NCs). For this, we conducted a …
Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers
Continuous development of Si photonics requires ecological and cost-effective materials. In
this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive …
this work, SiGe nanocrystals (NCs) embedded in TiO2 are investigated as a photosensitive …
Nanocrystal growth of single-phase Si1− xGex alloys
We present the formation of single-phase Si 1− x Ge x (x= 0.2, 0.4, 0.6, and 0.8) alloy
nanocrystals dispersed in a SiO 2 matrix. The studied samples were prepared by co …
nanocrystals dispersed in a SiO 2 matrix. The studied samples were prepared by co …
Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix
Using the atomistic sp3d5s* tight-binding method, we calculate the optical absorption
spectra due to phononless optical transitions in Si, Ge, and SiGe alloy nanocrystals …
spectra due to phononless optical transitions in Si, Ge, and SiGe alloy nanocrystals …
Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix
AV Belolipetsky, MO Nestoklon… - Journal of Physics …, 2019 - iopscience.iop.org
In the empirical tight-binding approach we study the electronic states in spherical SiGe
nanocrystals embedded in SiO 2 matrix. For the SiGe alloy and the matrix we use the virtual …
nanocrystals embedded in SiO 2 matrix. For the SiGe alloy and the matrix we use the virtual …
Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared
under different conditions are studied. TiO 2 cap/(GeSi/TiO 2) 2 multilayers (ML) were …
under different conditions are studied. TiO 2 cap/(GeSi/TiO 2) 2 multilayers (ML) were …
Spectral probing of carrier traps in Si–Ge alloy nanocrystals
Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering
method were investigated by mean of transient induced absorption. The carrier relaxation …
method were investigated by mean of transient induced absorption. The carrier relaxation …
Photon absorption and scattering of Ge nanocrystals embedded in SiO2 prepared by co-sputtering
Ge nanocrystals (GeNCs) embedded in SiO 2 matrix were prepared by co-sputtering method
and heat treatment. The formation of the GeNCs were confirmed by X-ray diffraction and …
and heat treatment. The formation of the GeNCs were confirmed by X-ray diffraction and …
[PDF][PDF] UNFOLDING BAND AND ABSORPTION ENERGY SHIFT OF Si-Ge NANO CRYSTALS FROM FIRST-PRINCIPLES CALCULATIONS
T VAN QUANG, TTHIT DUONG… - Communications in …, 2021 - academia.edu
Physical properties of the Si1− xGex alloys (x being the composition of Ge) can be
understood and predicted from their electronic band structures. In this paper, electronic band …
understood and predicted from their electronic band structures. In this paper, electronic band …