Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga 2 O 3 films
grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga 2 O 3 substrates were …

The spatial distribution of electron-hole pair generation in β-Ga 2 O 3 as a function of
scanning electron microscope (SEM) beam energy has been calculated by a Monte Carlo …

The electrical performance of vertical geometry Ga 2 O 3 rectifiers was measured before and
after 10 MeV proton irradiation at a fixed fluence of 10 14 cm− 2, as well as subsequent …

Homoepitaxial Ga 2 O 3 rectifiers with vertical geometry were subject to 18 MeV alpha
particle irradiation at fluences of 10 12–10 13 cm− 2, simulating space radiation exposure …

Due to their unique material and electrical properties for wide band gap semiconductor
materials, they can be applied to wide range of applications such as high-power electronics …

The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and
after 10 MeV proton irradiation at a fixed fluence of 1014 cmÀ2, as well as subsequent …