Physical unclonable functions (PUFs) have emerged as a promising security primitive for low-cost authentication and cryptographic key generation. However, PUF stability with …
S Ghosh, K Roy - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Variations in process parameters affect the operation of integrated circuits (ICs) and pose a significant threat to the continued scaling of transistor dimensions. Such parameter …
SV Kumar, CH Kim… - 2009 Asia and South …, 2009 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of Hf …
SV Kumar, CH Kim… - IEEE Transactions on Very …, 2009 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) in pMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent introduction of …
This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in …
Abstract Physically Unclonable Functions (PUFs) are mainly used for generating unique keys to identify electronic devices. These entities mainly benefit from the process variations …
N Karimi, T Moos, A Moradi - IACR Transactions on Cryptographic …, 2019 - tches.iacr.org
Vulnerability of cryptographic devices to side-channel analysis attacks, and in particular power analysis attacks has been extensively studied in the recent years. Among them, static …
G Giusi, F Crupi, C Pace, C Ciofi… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
In this paper, complementary measurements of the drain and the gate low-frequency noise are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with …
Bias temperature instability is a common relia-bility issue in Metal Oxide Semiconductor Field Effect Transistors used in silicon integrated circuits. When transferred to in-dustrial …