In this review paper, recent progress in the fabrication, transfer, and fundamental physical
properties of freestanding oxide perovskite thin films is discussed. First, the main strategies …

Complex oxides show a vast range of functional responses, unparalleled within the
inorganic solids realm, making them promising materials for applications as varied as next …

To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic,
metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to …

Freestanding perovskite oxide membranes have drawn great attention recently since they
offer exceptional structural tunability and stacking ability, providing new opportunities in …

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

Epitaxial growth of thin‐film heterostructures is generally considered the most successful
procedure to obtain interfaces of excellent structural and electronic quality between three …

Complex-oxide materials are gaining a tremendous amount of interest in the semiconductor
materials and device community as they hold many useful intrinsic physical properties such …

Freestanding perovskite thin films display many unprecedented properties and exhibit the
potential to be easily integrated on other non-oxide substrates or layers. In this work, we …

Freestanding oxide membranes constitute an intriguing material platform for new
functionalities and allow integration of oxide electronics with technologically important …

Epitaxial lift-off techniques, which aim to separate ultrathin single-crystalline epitaxial layers
off of the substrate, are becoming increasingly important due to the need of lightweight and …