Silicon compound nanomaterials: Exploring emission mechanisms and photobiological applications

A Dutt, RA Salinas, SE Martínez-Tolibia… - Advanced Photonics …, 2023 - Wiley Online Library
After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are
made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide …

Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films

I Parkhomenko, L Vlasukova, F Komarov, O Milchanin… - Thin Solid Films, 2017 - Elsevier
Abstract Si-rich (SiN 1.1) and N-rich (SiN 1.5) silicon nitride films were grown on the Si
wafers by plasma-enhanced chemical vapor deposition. Their composition and structure …

Modification of light emission in si-rich silicon nitride films versus stoichiometry and excitation light energy

T Torchynska, L Khomenkova, A Slaoui - Journal of Electronic Materials, 2018 - Springer
Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-
enhanced chemical vapor deposition. The Si content was varied by changing the NH 3/SiH …

Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD

I Guler - ECS Journal of Solid State Science and Technology, 2023 - iopscience.iop.org
Silicon nitride thin films are very important for their possible use in semiconductor industry
and electronic applications. Changing the deposition parameters, silicon nitrides which have …

Photoluminescence from silicon nanocrystals embedded in silicon nitride fabricated by low-pressure chemical vapor deposition followed by high-temperature …

N Hafsi, H Bouridah, MR Beghoul… - Journal of Applied …, 2015 - pubs.aip.org
The photoluminescence (PL) from silicon nanocrystals (Si-ncs) embedded in an amorphous
silicon nitride matrix was examined both experimentally and through theoretical simulations …

Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

W Liao, X Zeng, W Yao, X Wen - Applied Surface Science, 2015 - Elsevier
Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using
plasma-enhanced chemical vapor deposition (PECVD). Small size (∼ 3 nm) amorphous …

Raman study of light-emitting SiNx films grown on Si by low-pressure chemical vapor deposition

F Komarov, L Vlasukova, I Parkhomenko, O Milchanin… - Thin Solid Films, 2015 - Elsevier
Si-rich silicon nitride (SRSN) films were deposited on Si wafers by low pressure chemical
vapor deposition (LPCVD) technique and, subsequently, annealed at (800–1200)° C to form …

Self-assembled nc-Si/a-SiNx: H quantum dots thin films: An alternative solid-state light emitting material

B Sain, D Das - Journal of Luminescence, 2015 - Elsevier
Nanocrystalline silicon quantum dots (QDs) of varying size from~ 5.4 to 2.2 nm embedded in
amorphous silicon-nitride matrix (nc-Si-QDs/a-SiN x: H) were prepared via ICP-CVD (13.56 …

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

SW Fu, HJ Chen, HT Wu, BR Chuang, CF Shih - Applied Surface Science, 2016 - Elsevier
This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO 2 superlattice-
based memory devices with an improved memory window and retention properties. The SiO …

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated …

MA Serrano-Núñez, A Rodríguez-Gómez… - RSC …, 2016 - pubs.rsc.org
Chlorinated-silicon nitride (SiNx: Cl) thin films with embedded silicon quantum dots (Si-QDs)
were grown by remote plasma enhanced chemical vapor deposition using SiH2Cl2, H2 …