AK Nishad, R Sharma - Micro & Nano Letters, 2015 - Wiley Online Library
An analytical model for the computation of equivalent capacitance in top‐contact and side‐ contact multilayer graphene nanoribbon interconnects is presented, taking into …
M Jatkar, PY Mallikarjun - Materials Science in Semiconductor Processing, 2025 - Elsevier
Abstract This study incorpates Density Functional Theory (DFT) to investigate the influence of copper (Cu) and Iron (Fe) atom passivation on Boron Nitride Nanoribbons (ZBNRs) …
YS Song - Handbook of Emerging Materials for Semiconductor …, 2024 - Springer
The continuous miniaturization and increasing complexity of semiconductor devices have necessitated the development of advanced interconnect technologies. Graphene, a two …
WM Chanu, D Das - Journal of Circuits, Systems and Computers, 2018 - World Scientific
In this work, we have presented the temperature-dependent analytical time domain model for top-contact multilayer graphene nanoribbon (TC-MLGNR) and side-contact multilayer …
R Nashed, C Pan, X Wu, I Asselberghs… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we provide an accurate method to determine the interlayer resistivity of 2-D layered systems by directly measuring the resistance at a mono-to bi-layer step and feeding …
Proper interconnect selection has become challenging as technology is shrinking towards dimensions of nanometer. They have a direct impact on power dissipation, time delay …
Semiconductor manufacturing is the workhorse for a wide range of industries. It lies at the heart of consumer electronics, telecommunication equipment and medical devices. Most …
Modeling approaches are developed to optimize emerging on-chip and off-chip electrical interconnect technologies and benchmark them against conventional technologies. While …
R Nashed, C Pan, X Wu, I Asselberghs, Z Tokei… - ieeexplore.ieee.org
In this paper, we provide an accurate method to determine the interlayer resistivity of two- dimensional layered systems by directly measuring the resistance at a mono-to bi-layer step …