In this study, we evaluated the changes of the properties of TiO 2 thin films conducted to O 2
plasma treatment at various plasma powers. The XPS analysis showed that the …

In the past several decades, the density and performance of transistors in a single chip have
been increasing based on Moore's Law. However, the slowdown of feature size reduction …

We researched the reduction of leakage current by Al doping in TiO 2 thin film. During the
TiO 2 thin film deposition process, Al 2 O 3 thin film deposition was used for Al doping. XPS …

Over the last several years, there has been significant emphasis on the study of multilevel
inverters (MLIs) within the field of power electronics. MLI is often preferred over traditional 2L …

Rutile-TiO 2 has been actively studied as a high-k candidate for next-generation dynamic
random-access memory (DRAM) capacitors due to its higher dielectric constant compared to …

As the DRAM devices continue to scale down, the leakage current of the capacitors is
having a significant impact on DRAM operation. We have analyzed the factors that …

La fuga de corriente y sobrevoltaje son de los problemas más críticos en los sistemas
eléctricos y electrónicos, los cuales están relacionados con quejas de clientes, y que se …

Tetragonal ZrO 2 high-k material as the dielectric layer of dynamic random access memory
(DRAM) capacitors faces bulk defect related leakage current, which is one of the main …

Successful development of 20 nm or smaller dynamic random-access memory (DRAM)
requires reduction of the leakage current in capacitors with high-k dielectrics. To reduce the …

Retention time is a critical characteristic in Dynamic Random Memory (DRAM). In order to
improve DRAM retention time, leakage must be reduced. In manufacturing, the bit line (BL) …