Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications
Piezoelectric materials are promising for pressure sensors in a variety of industrial
applications such as automotive and petroleum fields. Typical piezoelectric sensors rely …
applications such as automotive and petroleum fields. Typical piezoelectric sensors rely …
Highly efficient photoelectrochemical water splitting using GaN-nanowire photoanode with tungsten sulfides
In the present study, we have achieved high-performance photoelectrochemical water
splitting (PEC-WS) using GaN nanowires (NWs) coated with tungsten sulfide (W x S1 …
splitting (PEC-WS) using GaN nanowires (NWs) coated with tungsten sulfide (W x S1 …
Drastic improvement in photoelectrochemical water splitting performance over prolonged reaction time using new carrier-guiding semiconductor nanostructures
The performance of photoelectrochemical water splitting (PEC-WS) over time was drastically
improved using new carrier-guiding semiconductor nanostructures, namely InGaN/GaN core …
improved using new carrier-guiding semiconductor nanostructures, namely InGaN/GaN core …
Fast response characteristics of flexible ultraviolet photosensors with GaN nanowires and graphene
We report the fast response characteristics of flexible ultraviolet photosensors with GaN
nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media …
nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media …
Improvement in the photoelectrochemical water-splitting performance using GaN nanowires with bundle structures
We report an approach for improving the photoelectrochemical water splitting (PEC–WS)
performance using GaN-nanowire (NW) bundles (GNW-BDLs) as the photoanode material …
performance using GaN-nanowire (NW) bundles (GNW-BDLs) as the photoanode material …
Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires
We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling
migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires …
migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires …
[HTML][HTML] Photoelectrochemical water splitting using GaN nanowires with reverse-mesa structures as photoanode material
We report improved photoelectrochemical water splitting (PEC-WS) using GaN nanowires
(NWs) with reverse-mesa structures (RMNWs) formed on Si (111) as a photoanode material …
(NWs) with reverse-mesa structures (RMNWs) formed on Si (111) as a photoanode material …
Unravelling the strain relaxation processes in silicon nanowire arrays by X-ray diffraction
Investigations performed on silicon nanowires of different lengths by scanning electron
microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction …
microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction …
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate
In this work, the influence of micro-and macro-deformation profiles in GaN nanowires (NWs)
on the angular intensity distribution of X-ray diffraction are studied theoretically. The …
on the angular intensity distribution of X-ray diffraction are studied theoretically. The …
Formation mechanism of GaN nanowires with various shapes on Si (111)
We discuss the formation mechanism of GaN nanowires (NWs) with various shapes grown
on Si (111) by using a plasma-assisted molecular-beam epitaxy. The GaN NWs have not …
on Si (111) by using a plasma-assisted molecular-beam epitaxy. The GaN NWs have not …