[HTML][HTML] Challenges and recent prospectives of 3D heterogeneous integration

S Zhang, Z Li, H Zhou, R Li, S Wang, KW Paik… - E-Prime-Advances in …, 2022 - Elsevier
With the continuous reduction of chip feature size, the continuation of Moore's Law becomes
increasingly difficult and heterogeneous integration has become one of the important …

Comprehensive analysis of a Cu nitride passivated surface that enhances Cu-to-Cu bonding

H Seo, H Park, SE Kim - IEEE Transactions on Components …, 2020 - ieeexplore.ieee.org
As 3-D packaging is expected to meet new requirements for next-generation system-in-
packaging (SiP), various technologies have been discussed for vertical integration. To …

Characteristics of copper nitride nanolayer used in 3D Cu bonding interconnects

H Park, H Seo, SE Kim - Electronic Materials Letters, 2021 - Springer
Cu–Cu bonding is a key process in fine pitch Cu interconnect in 3-dimenssional Si
integration. Despite the excellent electrical property and pattern ability of Cu material, the Cu …

Surface density gradient engineering precedes enhanced diffusion; drives CMOS in-line process flow compatible Cu–Cu thermocompression bonding at 75 C

AK Panigrahy, T Ghosh, SRK Vanjari… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Diffusion is one of the most critical and key factor for achieving low temperature and low
pressure thermocompression bonding. In this work, we propose a novel concept of …

Thermosonic direct Cu pillar bonding for 3D die stacking

A Roshanghias, A Rodrigues, S Schwarz… - SN Applied …, 2020 - Springer
The emerging 3D IC stacking technology as one of the main platforms for 3D integration
gains significant performance advantages by using copper (Cu) pillar interconnections …

Effects of two-step plasma treatment on Cu and SiO2 surfaces for 3D bonding applications

HK Seo, SE Kim, G Kim, HS Park… - 2020 IEEE 70th …, 2020 - ieeexplore.ieee.org
Cu-to-Cu bonding is necessary for high density, fine-pitch interconnect and high bandwidth
in 3D stacking technology. Although various Cu-to-Cu bonding studies have been reported …

Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications

SK Tallapalli, V Vijayakumar, NA Vignesh… - … on Electrical and …, 2024 - Springer
The increasing need for smaller, quicker devices that can perform new functions is driving
researchers to strictly adhere to Moore's law. To boost operating speed, the industry has …

Thermal management in TSV based 3D IC Integration: A survey

VK Sanipini, B Rakesh, AJ Chamanthula… - Materials Today …, 2021 - Elsevier
Abstract Three Dimensional IC (3D IC) integration is one of the emerging technology which
suits CMOS applications by stacking various IC layers vertically. In 3D IC, IC Layers are …

ICT System for 14.0 Adoption: Comparative Study to Assess the Readiness in Manufacturing MSMEs

S Nandhini, VR Palanivelu, AK Panigrahy… - Journal of …, 2022 - Wiley Online Library
One of India's fastest‐growing industries is the manufacturing sector centered on exports.
Additionally, it has a greater impact on the economic development of India. Technology in …

An extensive survey on future direction for the reduction of noise coupling problem in TSV based 3-dimensional IC integration

MS Kumar, J Mohanraj, NV Kumar… - Materials Today …, 2021 - Elsevier
Over the period of meticulous scaling IC's are crucially waiting for a platform which is planar.
The most important and actual restriction is nothing, but delay of interconnect is almost …