Time-resolved intervalley transitions in GaN single crystals
S Wu, P Geiser, J Jun, J Karpinski, D Wang… - Journal of applied …, 2007 - pubs.aip.org
We present a direct observation of time-resolved intervalley transitions of electrons between
the conduction band Γ and L valleys in GaN single crystals using a two-color (ultraviolet and …
the conduction band Γ and L valleys in GaN single crystals using a two-color (ultraviolet and …
[PDF][PDF] Automated System for Selective Etching of the AlxGa1− xAs/GaAs System and Some Applications
MA Sagioro, S Pádua, FM Matinaga… - Revista de Fısica …, 2005 - academia.edu
A simple and fast method to remove semiconductor substrates from epitaxialy grown thin
films can be very useful for studies of their optical properties. After substrate removal it is …
films can be very useful for studies of their optical properties. After substrate removal it is …
[PDF][PDF] and Phonon Dynamics in GaN Single Crystals
S Wu - 2007 - lle.rochester.edu
This thesis presents a comprehensive study of time-resolved intervalley transitions of hot
electrons, as well as generation and detection of coherent acoustic phonons, in high-quality …
electrons, as well as generation and detection of coherent acoustic phonons, in high-quality …