Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

We demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots
(QDs) at wavelengths above 1.5 μm that are compatible with standard long-distance fiber …

Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …

A procedure of InAs/InP quantum dots elaboration emitting at 1.55 μm by gas source
molecular beam epitaxy is described. It is based on a modification of the capping layer …

InAs quantum dots (QDs) with a high density of 9× 10 10 cm− 2 are formed on InAlGaAs
layer/InP (311) B substrates. Lasers having five-period stacked InAs QD layers are operated …

The characteristics of 1.55 μ\rmm InAs self-organized quantum-dot lasers, grown on (001)
InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the …

We study a one-dimensional (iso) spin 1/2 Bose gas with repulsive δ-function interaction by
the Bethe Ansatz method and discuss the excitations above the polarized ground state. In …

In recent years, a considerable amount of work has been devoted to understanding and
controlling the formation of self-assembled nanostructures by the Stranski–Krastanov growth …

We show how the height dispersion of self-organized InAs/InP (001) quantum islands
emitting at 1.55 μm was reduced by optimizing the epitaxial growth parameters. Low height …