Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …

The electrical characteristics of a thin film transistor (TFT) can be tuned by using an
asymmetric work function source–drain (S–D) electrode. However, to realize the effect of this …

A hybrid phototransistor is developed with solution‐processed organolead trihalide
perovskite (MAPbI3) capping indium gallium zinc oxide (IGZO), which well fuses the …

Amorphous oxide semiconductors have attracted attention in electronic device applications
because of their high electrical uniformity over large areas, high mobility, and low …

In this work, the role of film thickness on white light-driven photo response and electrical
properties of TiO 2/Si heterojunctions is investigated. Two types of substrates, viz. pristine …

Active matrix organic light-emitting diodes (AMOLEDs) are considered to be a core
component of next-generation display technology, which can be used for wearable and …

Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing
to their high mobility. However, the mobility of a-IHZO thin-film transistors has not been …

The carrier transport and device instability of amorphous oxide semiconductor devices are
influenced by defects that are exponentially distributed in energy, because of amorphous …

Here, we report the persistent photoconductance (PPC) and transient photo-response
characteristics of photochemically activated and thermally annealed indium‑gallium‑zinc …

The multiple gate-voltage () dependencies of the OFF-state photocurrent () with increasing,
decreasing, or being constant are observed in amorphous InZnO (a-IZO) thin-film transistors …