We have investigated the electrical properties of GaN-based high electron mobility
transistors (HEMT) on N+-type 4H SiC substrates and on sapphire substrate as a reference …

We present a detailed experimental and numerical study of a novel device so-called ballistic
deflection transistor (BDT). Based on InGaAs–InAlAs heterostructure on InP substrate, BDT …

This paper presents a comprehensive study of the behavior of surface charges in ballistic
deflection transistors, at room temperature, where the in-plane geometry associating two …

We present exploratory studies of digital circuit design using the recently proposed ballistic
deflection transistor (BDT) devices. We demonstrate a variety of possible logic functions …

In this paper a new waveguide design is proposed to be implemented as part of Ballistic
Deflection Transistor (BDT) Traveling Wave Amplifier Design. The BDT is designed to be …

This paper presents an optimization of the current-voltage characteristic of Ballistic
Deflection Transistors. The implementation of an adequate surface charge model in a Monte …

This letter presents a first successful integration of a high-k dielectric, ie, Al 2 O 3, with III-V
semiconductors in ballistic deflection transistors (BDTs). The Al 2 O 3 is deposited using …

This paper presents a new type of logic gate and associated circuit concepts for a recently
proposed device, the ballistic deflection transistor (BDT). The BDT is a planar structure …

We present implementation of recently proposed ballistic deflection transistors (BDTs) as
THz amplifiers. BDT is a planar device based on InGaAs/InAlAs/InP heterostructure with …

This paper presents Monte Carlo simulations of a unique non-linear device called Ballistic
Deflection Transistor. A self-consistent model for surface charges has been used and has …