A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
[HTML][HTML] Oxygen vacancies: The (in) visible friend of oxide electronics
Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …
representing important building blocks in many scientific and technological fields due to their …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
A detailed understanding of the resistive switching mechanisms that operate in redox-based
resistive random-access memories (ReRAM) is key to controlling these memristive devices …
resistive random-access memories (ReRAM) is key to controlling these memristive devices …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses
Fascinating characteristics of halide perovskites (HPs), which cannot be seen in
conventional semiconductors and metal oxides, have boosted the application of HPs in …
conventional semiconductors and metal oxides, have boosted the application of HPs in …
Comprehensive model of electron conduction in oxide-based memristive devices
C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
Memristive synapses and neurons for bioinspired computing
To realize highly efficient neuromorphic computing that is comparable to biological
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …