Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

Semiconductor nanowires have recently emerged as a new class of materials with
significant potential to reveal new fundamental physics and to propel new applications in …

Controlling the crystallographic phase purity of III− V nanowires is notoriously difficult, yet
this is essential for future nanowire devices. Reported methods for controlling nanowire …

We report a systematic study of carrier dynamics in Al x Ga1–x As-passivated GaAs
nanowires. With passivation, the minority carrier diffusion length (L diff) increases from 30 to …

We have used transient terahertz photoconductivity measurements to assess the efficacy of
two-temperature growth and core− shell encapsulation techniques on the electronic …

The incorporation of Au during vapor− liquid− solid nanowire growth might inherently limit
the performance of nanowire-based devices. Here, we assess the material quality of Au …

In conventional planar growth of bulk III− V materials, a slow growth rate favors high
crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we …

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the
GaAs core of GaAs/AlGaAs core–shell nanowires grown by metal–organic chemical vapor …

The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded
inside the AlGaAs shell of a GaAs core–multishell nanowire are investigated using optical …

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted
core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The …