Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO
and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering …

A self-powered solar-blind ultraviolet (UV) photodetector was realized on a Ag/ZnMgO/ZnO
vertical structure. A ZnO epitaxial layer was employed to serve as both the buffer layer for the …

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-
doped ZnO nanorods/pB-doped diamond (n-Al: ZnO NRs/p-BDD). It exhibits a significant …

A photodetector with a high spectrum selectivity and enhanced responsivity has been
realized in the ZnO NPs coated Au/ZnO/Au structure. In this structure, the ZnO NPs act as the …

Epitaxy on layered substrates, for example, mica, manifests different characteristic from that
on non-layered substrates, which is demonstrated to be the fantastic road towards high …

This work presents the study of morphology and thermal properties of thin ZnO films
fabricated by atomic layer deposition. The layers were deposited on n-Si (100) wafers at …

We have demonstrated a self-powered solar-blind ultraviolet (UV) photodetector based on
the Au/ZnMgO/ZnO: Al vertical structure. The comb-shaped Au was selected as the Schottky …

Abstract ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type
ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and …

A systematic investigation of Ga-doped ZnO (GZO) films deposited by radio frequency
reactive magnetron co-sputtering of Zn and GaAs has been carried out toward the …

The n-type Ce: ZnO (NL) grown using a hydrothermal method was deposited on a p-type
boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce: ZnO NL/p-BDD …