[HTML][HTML] A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Demonstration of germanium vertical gate-all-around field-effect transistors featured by self-aligned high-κ metal gates with record high performance
A special Ge nanowire/nanosheet (NW/NS) p-type vertical sandwich gate-all-around (GAA)
field-effect transistor (FET)(Ge NW/NS pVSAFET) with self-aligned high-κ metal gates …
field-effect transistor (FET)(Ge NW/NS pVSAFET) with self-aligned high-κ metal gates …
[HTML][HTML] Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
Abstract Two-dimensional (2D) semiconductor-based vertical-transport field-effect
transistors (VTFETs)–in which the current flows perpendicularly to the substrate surface …
transistors (VTFETs)–in which the current flows perpendicularly to the substrate surface …
Neural network-based and modeling with high accuracy and potential model speed
In this brief, we demonstrate a neural network (NN)-based device modeling framework. This
NN model is built to model advanced field-effect transistors (FETs). Specific transfer …
NN model is built to model advanced field-effect transistors (FETs). Specific transfer …
Semiconductor technology looks up
P Ball - Nature Materials, 2022 - nature.com
Moore's law been exaggerated? There's no doubt that physical limits must exist on how
much smaller the components on silicon chips can be made to maintain the trend in …
much smaller the components on silicon chips can be made to maintain the trend in …
Vertical C-shaped-channel nanosheet FETs featured with precise control of both channel-thickness and gate-length
A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with
precise control of channel-thickness and gate-length, and a unique integration flow of Dual …
precise control of channel-thickness and gate-length, and a unique integration flow of Dual …
[HTML][HTML] A perspective on electrical generation of spin current for magnetic random access memories
Spin currents are used to write information in magnetic random access memory (MRAM)
devices by switching the magnetization direction of one of the ferromagnetic electrodes of a …
devices by switching the magnetization direction of one of the ferromagnetic electrodes of a …