Monolithic integration of optoelectronics with electronics is a much-desired functionality.
Here, we demonstrate that it is possible to realize low-loss Ge quantum-well photonic …

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

The optoelectronic applications of Si are restricted to the visible and near-infrared spectral
range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance …

Room‐temperature broadband infrared photoresponse in Si is of great interest for the
development of on‐chip complementary metal–oxide–semiconductor (CMOS)‐compatible …

We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is
monolithically integrated with silicon-on-insulator waveguides. The active quantum well …

Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …

We reported significant improvements in device speed by reducing the quantum barrier (QB)
thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB …

Si3N4 photonic integrated circuits have gain significant and rapid interest in different
photonic applications thanks to its superior passive performance. Nevertheless, optical …

We present the design and analysis of three-terminal Ge 1-x Sn x/Ge multiple-quantum-well
(MQW) heterojunction phototransistors (HPTs) for high-performance short-wave infrared …

We report on tensile-strained Ge/Si_0. 11Ge_0. 89 quantum-well (QW) metal-semiconductor-
metal (MSM) photodetectors on Si substrates. A tensile strain of 0.21% is introduced into the …