Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

Online junction temperature (T j) measurement enables robust power converter operations
by providing overtemperature protection and condition monitoring of the power devices. For …

The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide
(SiC) MOSFETS junction temperature measurement for over-temperature protection and …

Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …

SiC MOSFET power modules are becoming global solutions in systems operating in harsh
environment, and due to large economic implications, achieving reliability of such systems is …

The long-term reliability concerns regarding the latest power devices, eg, silicon carbide
(SiC) MOSFETs, need to be well understood for their rapid and widespread deployment in …

In this article, a method for evaluating the implications of threshold voltage (VTH) drift from
gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between …

AC power cycling tests allow the most realistic reliability assessment by applying close to
real stress to the device or module under test to meet functional safety standards, which is …