TT Mnatsakanov, ME Levinshtein… - Semiconductor …, 2002 - iopscience.iop.org
Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide …
Electron-phonon coupling is at the core of various regimes of material-based science and technology. Taking 3 C-silicon carbide (3 C-SiC) as an example, despite its very wide …
ME Levinshtein, TT Mnatsakanov… - Semiconductor …, 2011 - iopscience.iop.org
In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …
Q Zhang, AK Agarwal - physica status solidi (a), 2009 - Wiley Online Library
There has been a rapid improvement in SiC materials and power devices during the last few years. SiC unipolar devices such as Schottky diodes, JFETs and MOSFETs have been …
ME Levinshtein, PA Ivanov, AK Agarwal, JW Palmour - Electronics Letters, 2002 - IET
Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength …
PA Ivanov, ME Levinshtein, SL Rumyantsev… - Solid-State …, 2002 - Elsevier
The dependence of the base current gain β on the collector current IC has been measured in high-voltage 4H-SiC bipolar junction transistors at collector current densities jC from 20 to …
TT Mnatsakanov, ME Levinshtein, PA Ivanov… - Journal of applied …, 2003 - pubs.aip.org
The parameters of electron–hole scattering EHS in silicon carbide SiC are estimated by analyzing pulsed isothermal current–voltage characteristics of 6.0 kV 4H–SiC diodes over a …
АА Лебедев, ПА Иванов, МЕ Левинштейн, ЕН Мохов… - 2019 - researchgate.net
Современная цивилизация нуждается во все более потребляемых источниках энергии, чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …