We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

Simple analytical approximations are proposed for describing the temperature and
concentration dependences of low-field mobility in the main polytypes of silicon carbide …

Electron-phonon coupling is at the core of various regimes of material-based science and
technology. Taking 3 C-silicon carbide (3 C-SiC) as an example, despite its very wide …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

There has been a rapid improvement in SiC materials and power devices during the last few
years. SiC unipolar devices such as Schottky diodes, JFETs and MOSFETs have been …

Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6
kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength …

The dependence of the base current gain β on the collector current IC has been measured
in high-voltage 4H-SiC bipolar junction transistors at collector current densities jC from 20 to …

The parameters of electron–hole scattering EHS in silicon carbide SiC are estimated by
analyzing pulsed isothermal current–voltage characteristics of 6.0 kV 4H–SiC diodes over a …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …