Silicon carbide is considered as a more suitable material for piezoresistive pressure sensors
in a high-temperature environment due to its excellent characteristics. In this paper …

Silicon carbide based semiconductor electronic devices and circuits are presently being
developed for use in high-temperature, high-power, and high-radiation conditions under …

A 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment
applications, eg, high temperature (~ 650° C) and/or in corrosive chemicals is presented …

This paper presents a review of recent results of silicon carbide (SiC) piezoresistive
pressure transducers that have been demonstrated to operate up to 600° C. The results offer …

HIGH TEMPERATURE ELECTRONICS, COMMUNICATIONS, AND SUPPORTING
TECHNOLOGIES FOR VENUS MISSIONS Page 1 Glenn Research Center at Lewis Field HIGH …

This paper presents the process of fabricating pressure sensor chip based on N-type 4H-SiC
with high doping and realizing leadless packaging. The piezoresistive functional layer of the …

We have utilized a single crystal silicon carbide (SiC) pressure sensor to validate the
existence of thermo-acoustic instability at 310 Hz in a combustor test rig operating at 420/spl …

Burst force of several 4H-SiC pressure sensor diaphragms fabricated by reactive ion etching
(RIE) is measured and coupled with finite-element (FE) analyses to extract a fracture …

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first
time to measure pressure perturbations at temperatures as high as 600° C during laboratory …

The paper reports recent results of the long term reliability evaluation of single crystal silicon
carbide (SiC) piezoresistive pressure sensors operated up to 500 degC. In-depth failure …