Simulation of thermal stress in magnetron sputtered thin coating by finite element analysis
Stresses due to thermal mismatch develop in thin coatings deposited by physical vapour
deposition (PVD) processes when cooled down to room temperature from deposition …
deposition (PVD) processes when cooled down to room temperature from deposition …
Filamentary-switching model in RRAM for time, energy and scaling projections
D Ielmini - 2011 International Electron Devices Meeting, 2011 - ieeexplore.ieee.org
The resistive switching memory (RRAM) is considered promising for ultra-high-density
storage below the 10 nm node. To assess RRAM feasibility, the reduction of switching …
storage below the 10 nm node. To assess RRAM feasibility, the reduction of switching …
Modeling thermal stresses in 3-D IC interwafer interconnects
J Zhang, MO Bloomfield, JQ Lu… - IEEE transactions on …, 2006 - ieeexplore.ieee.org
We present a finite-element-based analysis to determine if there are potential reliability
concerns due to thermally induced stresses in interwafer copper via structures in three …
concerns due to thermally induced stresses in interwafer copper via structures in three …
Cracking in semiconductor devices–effect of plasticity under triaxial constraint
S Hassan, JL Wu, J Lan, S Tang, J He… - Journal of the …, 2024 - Elsevier
A semiconductor device integrates dissimilar materials of small sizes and complex
geometries. During fabrication, the materials are deposited at various temperatures. Both …
geometries. During fabrication, the materials are deposited at various temperatures. Both …
Thermal stresses in 3D IC inter-wafer interconnects
J Zhang, MO Bloomfield, JQ Lu, RJ Gutmann… - Microelectronic …, 2005 - Elsevier
We present a finite element based analysis to determine if thermally induced stresses in
inter-wafer Cu via structures in 3D ICs using BCB-bonded wafers is a potential reliability …
inter-wafer Cu via structures in 3D ICs using BCB-bonded wafers is a potential reliability …
Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling
W Li, CM Tan, Y Hou - Journal of applied physics, 2007 - pubs.aip.org
Electromigration (EM) is a major failure mechanism in ultralarge-scale integration
interconnections. Various atomic migration mechanisms due to the electron wind force …
interconnections. Various atomic migration mechanisms due to the electron wind force …
Bipolar-switching model of RRAM by field-and temperature-activated ion migration
The resistive switching memory (RRAM) may offer a scalable solution for 3D high-density
non-volatile storage. For physics-based prediction of RRAM scalability, however, accurate …
non-volatile storage. For physics-based prediction of RRAM scalability, however, accurate …
Numerical simulations and experimental measurements of stress relaxation by interface diffusion in a patterned copper interconnect structure
We describe a series of experiments and numerical simulations that were designed to
determine the rate of stress-driven diffusion along interfaces in a damascene copper …
determine the rate of stress-driven diffusion along interfaces in a damascene copper …
Analysis of the reservoir effect on electromigration reliability
I Jeon, YB Park - Microelectronics Reliability, 2004 - Elsevier
The reservoir effect on electromigration reliability is analyzed using the normalized vacancy
concentration distribution in the reservoir region of multi-level Al–0.5% Cu interconnect …
concentration distribution in the reservoir region of multi-level Al–0.5% Cu interconnect …
Test chip for the development and evaluation of sensors for measuring stress in metal interconnects
The development of a new test chip is presented, containing structures for the direct
measurement of stress in metallic interconnect layers associated with silicon integrated …
measurement of stress in metallic interconnect layers associated with silicon integrated …