Two-dimensional materials prospects for non-volatile spintronic memories
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
[HTML][HTML] Recent progress on 2D magnets: Fundamental mechanism, structural design and modification
ABSTRACT The two-dimensional (2D) magnet, a long-standing missing member in the
family of 2D functional materials, is promising for nextgeneration information technology …
family of 2D functional materials, is promising for nextgeneration information technology …
Heterostructure construction of SnS2 Debye nanowires modified with ZnO nanorods for chemiresistive H2S detection in sulfur hexafluoride decomposition products
The fast detection of low concentration of H 2 S sensor has certain engineering significance
for SF 6 electrical equipment. Here, a sensitive material based on ZnO nanorods-modified …
for SF 6 electrical equipment. Here, a sensitive material based on ZnO nanorods-modified …
Engineering symmetry breaking in 2D layered materials
Symmetry breaking in 2D layered materials plays a significant role in their macroscopic
electrical, optical, magnetic and topological properties, including, but not limited to, spin …
electrical, optical, magnetic and topological properties, including, but not limited to, spin …
Sulfur‐Assisted Surface Modification of Lithium‐Rich Manganese‐Based Oxide toward High Anionic Redox Reversibility
Z Xu, X Guo, W Song, J Wang, T Qin… - Advanced …, 2024 - Wiley Online Library
Energy storage via anionic redox provides extra capacity for lithium‐rich manganese‐based
oxide cathodes at high voltage but causes gradual structural collapse and irreversible …
oxide cathodes at high voltage but causes gradual structural collapse and irreversible …
Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor
Manipulating a quantum state via electrostatic gating has been of great importance for many
model systems in nanoelectronics. Until now, however, controlling the electron spins or …
model systems in nanoelectronics. Until now, however, controlling the electron spins or …
Synthesis, characterization, properties and applications of two-dimensional magnetic materials
Abstract Recently, two-dimensional (2D) magnetic materials have attracted extensive
interest thanks to their potential application as spintronic devices. Albeit bulk magnetic …
interest thanks to their potential application as spintronic devices. Albeit bulk magnetic …
Controlled Synthesis and Accurate Doping of Wafer‐Scale 2D Semiconducting Transition Metal Dichalcogenides
X Li, J Yang, H Sun, L Huang, H Li, J Shi - Advanced Materials, 2023 - Wiley Online Library
Abstract 2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically
thin thickness, a dangling‐bond‐free surface, flexible band structure, and silicon‐compatible …
thin thickness, a dangling‐bond‐free surface, flexible band structure, and silicon‐compatible …
Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors
Two-dimensional (2D) ferromagnetic semiconductors have been recognized as the
cornerstone for next-generation electric devices, but the development is highly limited by the …
cornerstone for next-generation electric devices, but the development is highly limited by the …
Doping engineering and functionalization of two-dimensional metal chalcogenides
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …