Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …

In this brief, we report that HfO 2–ZrO 2 superlattice (SL) ferroelectric field-effect transistors
(FeFETs) demonstrate improved endurance, fatigue recovery, and retention performance …

We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric
tunnel junction (FTJ) in part-I of this work. Here, we have used the 2-D potential functions …

The essential physics of the ferroelectric tunnel junction (FTJ) is assessed with technology
computer-aided design (TCAD) simulations and analytical models. With experimental data …

Ferroelectric tunnel junction (FTJ) based on the metal–ferroelectric–insulator–
semiconductor (MFIS) stacks shows great potential in neuromorphic and in-memory …

Hafnia-based ferroelectric materials offer a range of advantages, including excellent CMOS
compatibility, fast switching speed, and high endurance, positioning them as superior …

In this work, we demonstrate an efficient and comprehensive model for designing non-
volatile and volatile ferroelectric tunnel junctions (FTJs), based on Metal-Ferroelectric …

Ferroelectric devices have gained significant interest, owing to their diverse range of
applications in fields such as non-volatile memories, steep-slope transistors, neuromorphic …