The exciton binding energy (Eb) is a key parameter that governs the physics of many
optoelectronic devices. At their best, trustworthy and precise measurements of Eb challenge …

The rapid development of the computational methods based on density functional theory, on
the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

We investigate excitonic absorption and emission in monolayer (1L) WSe 2 under tensile
strain. We observe a redshift of 100 meV in the A exciton energy and a decrease of 25 meV …

We have measured the effect of pressure on the energy of the direct-optical-absorption edge
(E 0 gap, Γ 15 v→ Γ 1 c) of cubic ZnS, covering the full stability range (0–15 GPa) of the …

Recently the developments in the field of II–VI-oxides have been spectacular. Various
epitaxial methods have been used to grow epitaxial ZnO layers. Not only epilayers but also …

Understanding the origin of temperature‐dependent bandgap in inorganic lead‐halide
perovskites is essential and important for their applications in photovoltaics and …

Recent scientific interest in examining the bandgap evolution of a MAPbI3 hybrid perovskite
by applying hydrostatic pressure has mostly focused on a room-temperature tetragonal …

High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on (001)-GaAs-substrates by
molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by …

The fundamental optical properties of Ga-doped ZnO films grown by metalorganic chemical
vapor deposition were investigated by room-temperature transmittance and …