Ion beam induced surface and interface engineering

IP Jain, G Agarwal - Surface Science Reports, 2011 - Elsevier
The injection of material into a target specimen in the form of an accelerated ion beam offers
a most valuable tool for altering its physical, chemical, structural, surface and interface …

[图书][B] Swift heavy ions for materials engineering and nanostructuring

DK Avasthi, GK Mehta - 2011 - books.google.com
Ion beams have been used for decades for characterizing and analyzing materials. Now
energetic ion beams are providing ways to modify the materials in unprecedented ways …

Interface-Induced Modifications in the Ferroelectric properties of 200 MeV Ag+15 Ion-Irradiated ZnO-BaTiO3 Nanocomposite Films

H Kundalia, A Ravalia, R Meena, K Asokan… - Journal of Electronic …, 2024 - Springer
Studies on nanocomposite films with an optimized composition of 0.6 ZnO-0.4
BaTiO3/Al2O3 were carried out to understand the effect of swift heavy ion (SHI)-induced …

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

A Attri, A Kumar, S Verma, S Ojha, K Asokan… - Nanoscale Research …, 2013 - Springer
We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type
silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm …

Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

EG Njoroge, CC Theron, JB Malherbe… - Nuclear Instruments and …, 2015 - Elsevier
In this study thin Zr films (135 nm) were deposited on 6H-SiC substrate at room temperature
by sputter deposition. The Zr/SiC couples were irradiated by 167 MeV Xe 26+ ions at room …

Investigations of elemental depth distribution and chemical compositions in the TiO2/SiO2/Si structures after ion irradiation

TV Phuc, M Kulik, D Kołodyńska, LH Khiem… - Surface and Coatings …, 2020 - Elsevier
The influence of noble gases ion implantation on the depth distribution of elements in the
TiO 2/SiO 2 bilayers on the Si substrates has been investigated using the Rutherford …

[HTML][HTML] Formation of metal silicide by swift heavy ion induced mixing at Mn/Si interface

R Verma, C Lal, IP Jain - Journal of Materials Research and Technology, 2014 - Elsevier
Swift heavy ion (SHI) beam mixing at metal/Si system forms various silicides at the interface.
In the present study SHI induced mixing has been investigated at Si/Mn/Si interfaces using …

Swift heavy ion induced effects at Mo/Si interface and silicide formation

G Agarwal, V Kulshrestha, R Jain… - … Journal devoted to …, 2009 - Wiley Online Library
Swift heavy ion (SHI) induced modification at metal/Si interfaces has emerged as an
interesting field of research due to its large applications. In this study, we investigate SHI …

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

N Bansal, S Kumar, SA Khan… - Radiation Effects and …, 2016 - Taylor & Francis
Energetic ion beams are proving to be versatile tools for modification and depth profiling of
materials. The energy and ion species are the deciding factor in the ion-beam-induced …

[PDF][PDF] STUDY OF ELEMENTAL DEPTH DISTRIBUTION IN THE MATERIAL TiO2/SiO2/Si BY RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS)

TV Phuc, M Kulik, AP Kobzev… - Communications in Physics, 2019 - academia.edu
In this study we investigated depth distributions of elements in the multilayer structures of
TiO2/SiO2/Si before and after ion irradiation. The samples were implanted with Ne+, Ar+ …